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Ordering number : ENN7988
2SA2125 / 2SC5964
2SA2125 / 2SC5964
Applications
*
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.
Features
* * * *
Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
Specifications ( ) : 2SA2125
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2!0.8m) Tc=25C Conditions Ratings (--50)100 (--50)100 (--)50 (--)6 (--)3 (--)6 (--)600 1.3 3.5 150 --55 to +150 Unit V V V V A A mA W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)100mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz 200 (390)380 (24)13 Ratings min typ max (-)1 (-)1 560 MHz pF Unit A A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3004 TS IM TB-00000265 No.7988-1/5
2SA2125 / 2SC5964
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)1A, IB=(--)50mA IC=(--)2A, IB=(-)100mA VCE=(--)2V, IB=(-)100mA IC=(--)10A, IE=0 IC=(--)100A, RBE=0 IC=(--)1mA, RBE= IE=(-)10A, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. (--50)100 (--50)100 (-)50 (--)6 (30)35 (230)300 (18)25 Ratings min typ (--125)100 (--250)190 (--)0.94 max (--230)150 (--500)290 (--)1.2 Unit mV mV V V V V V ns ns ns
Package Dimensions unit : mm 2038B
4.5 1.6 1.5
Switching Time Test Circuit
IB1 OUTPUT IB2 VR 50 + 100F + 470F VCC=25V RB
PW=20s D.C.1% INPUT
RL
2.5 1 0.4 0.5 1.5 3.0 2 3 1.0
4.0
0.4
VBE= --5V
IC=10IB1= --10IB2=1A For PNP, the polarity is reversed.
0.75
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
--5.0
IC -- VCE
2SA2125
--250 mA
--200 mA mA --150 mA --100
-50mA
5.0
IC -- VCE
2SC5964
100m A
80mA
60mA
--4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
Collector Current, IC -- A
Collector Current, IC -- A
40mA
20mA
--20mA
10mA
5mA
--10mA
--5mA
--1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
IB=0
--1.8 --2.0
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IB=0
1.8 2.0
Collector-to-Emitter Voltage, VCE -- V
IT07258
Collector-to-Emitter Voltage, VCE -- V
IT07259
No.7988-2/5
2SA2125 / 2SC5964
--3.0
IC -- VBE
2SA2125 VCE= --2V
3.0
IC -- VBE
2SC5964 VCE=2V
--2.5
2.5
Collector Current, IC -- A
--2.0
Collector Current, IC -- A
2.0
--1.5
1.5
--1.0
1.0
5C 25C --25 C
--0.5
0.5
0 0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2 IT07260
0 0
0.2
0.4
Ta=7 5C 25C --25C
0.6 0.8
Ta= 7
1.0
1.2 IT07261
Base-to-Emitter Voltage, VBE -- V
1000 7 5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
hFE -- IC
2SA2125 VCE= --2V
Ta=75C
7
2SC5964 VCE=2V
Ta=75C
DC Current Gain, hFE
5
DC Current Gain, hFE
3 2
25C
--25C
25C
--25C
3
2
100 7 5 3 --0.01
100 7 0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
1000
IT07262 1000
Collector Current, IC -- A
IT07263
f T -- IC
f T -- IC
2SC5964 VCE=10V
Gain-Bandwidth Product, f T -- MHz
Gain-Bandwidth Product, f T -- MHz
5
7 5
2SA2125 VCE= --10V
7 5 3 2
3 2
100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
100 7 5 3 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
100
IT07264 100
Cob -- VCB
Collector Current, IC -- A
IT07265
Cob -- VCB
2SA2125 f=1MHz Output Capacitance, Cob -- pF
2SC5964 f=1MHz
Output Capacitance, Cob -- pF
7
7
5
5
3
3
2
2
10 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Collector-to-Base Voltage, VCB -- V
5 7 --100 IT07266
10 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
5 7 100 IT07267
No.7988-3/5
2SA2125 / 2SC5964
7 5
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
2SA2125 IC / IB=20
5 3 2
VCE(sat) -- IC
2SC5964 IC / IB=20
3 2
0.1 7 5 3 2
--0.1 7 5 3 2
= Ta
C 75
= Ta
C 75
5C --2
25
C
25
C
C 5 --2
0.01 7 5 0.01
--0.01 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
3 2
IT07268 7
Collector Current, IC -- A
IT07269
VCE(sat) -- IC
25
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
VCE(sat) -- IC
2SC5964 IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
2SA2125 IC / IB=50
C
7 5 3 2 --0.1 7 5 3 2
Ta= --2 5
C
--1.0
C
5 3 2
75
0.1 7 5 3 2
7 Ta=
C --25
5 C
C 25
= Ta
C 75
5C --2
C 25
--0.01 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
0.01 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
3
IT07270 3
VBE(sat) -- IC
Collector Current, IC -- A
IT07271
VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2SA2125 IC / IB=20
2
2SC5964 IC / IB=20
2
--1.0
Ta= --25C
75C
1.0
Ta= --25C
75C
7
7
25C
5
5
25C
3 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
10 7 5 3
IT07272 1.4 1.3 1.2
ASO
Collector Current, IC -- A
IT07273
PC -- Ta
ICP=6A IC=3A
<10s
2SA2125 / 2SC5964
M ou nt ed
1m
10 0m
10
s
2 1.0 7 5 3 2 0.1 7 5 3 2
s
DC op
ms
Collector Dissipation, PC -- W
s 0 10
Collector Current, IC -- A
1.0
on
ac
50 s 0
er
era
tio
0.8
am
ic
n
bo
ar
d
0.6
(2
50
m
0.4
m2 !
0.01 0.1
2SA2125 / 2SC5964 Tc=25C Single Pulse (For PNP, minus sign is omitted.)
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7
0.
8m
m
0.2 0 0 20 40 60 80 100 120
)
140
160
Collector-to-Emitter Voltage, VCE -- V
IT07274
Ambient Temperature, Ta -- C
IT07275
No.7988-4/5
2SA2125 / 2SC5964
4.0 3.5
PC -- Tc
2SA2125 / 2SC5964
Collector Dissipation, PC -- W
3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40
Case Temperature, Tc -- C
60
80
100
120
140
160
IT07276
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice.
PS No.7988-5/5

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